This research theme deals with the failure analysis of power hemts, currently AlGaN/GaN hemts. The study is based on the design of test amplifiers, their characterization and their stress on ageing benches. The objective is to propose a methodology aimed toward discriminating predominant degradation modes and to suggest a link between the evolution of electrical performances and physical roots of these defects.
Keywords
- AlGaN/GaN HEMT RF
- RF power amplifier
- Reliability
- Pulsed-RF ageing tests
- Failure analysis
Main Collaborations
- GPM (Groupe de physisque des matériaux) Laboratory, UMR-CNRS 6634, Rouen, France
- Thales Air Defence, Ymare, France
In this research theme, design methods are proposed for :
RF-based reconfigurable on-chip network (WinoCod ANR project).
Wide-Band Distributed Low Noise Amplifier for Home Wireless Networks (EcoHome project)
Keywords
- Wireless applications
- Low Noise Amplifiers
- RF Design method
- Low power consumption
Main Collaborations
- IETR, Supelec, Rennes
- LIP6, Université Pierre et Marie Curie, Paris
- NXP Semiconductors France, Caen