Skip to main content
Publications of Cedric Duperrier

Journal Papers
  1. F.Temcamani, JB.Fonder, O.Latry, C.Duperrier, " Electrical and Physical analysis of thermal degradations of AlGaN/GaN HEMT under Radar-type operating life", IEEE Transactions on Microwave Theory and Techniques, vol. 64, issue 3 , pp. 758 -766, march 2016.
  2. A. Divay, C. Duperrier, F. Temcamani, O. Latry, "Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode ", Microelectronics Reliability (Special Issue), Volume 64, Pages 585-588, September 2016.
  3. A. Divay, O. Latry, C. Duperrier, F. Temcamani, "Ageing of GaN HEMT devices: which degradation indicators?", Journal of semiconductors, Volume 37, n. 1, Pages 014001-1--014001-4, 2016.
  4. A. Divay, M. Masmoudi, O. Latry, C. Duperrier, F. Temcamani, "An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors.", Microelectronics Reliability (Special Issue), Volume 55, Issues 9-10x, Pages 1703-1707, August-September 2015.
  5. JB. Fonder, O. Latry, C. Duperrier, M. Stanislawiak, H. Maanane, P. Eudeline, F. Temcamani, "Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life", Microelectronics Reliability, Volume 52, Issue 11, Pages 2561–2567, 2012.
  6. JB. Fonder, L. Chevalier, C. Genevois, O. Latry, C. Duperrier, F. Temcamani, H. Maanane, "Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test", Microelectronics Reliability (Special Issue), Volume 52, Issues 9–10, Pages 2205–2209, 2012.
  7. S. Allam-Ouyahia, C. Duperrier, C. Tolant, F. Temcamani, P. Eudeline, "Bandwidth enhancement of an inverse class-F power amplifier based on LDMOS devices", International Journal of Electronics, Pages 1411-1420, 2011.
  8. S. Dellier, C. Duperrier, M. Campovecchio, J. Rousset, R. Quere, A. Mallet, L. Lapierre, "Evolutive Design Assistant Tool For Microwave Circuits", International Journal of RF and Microwave Computer-Aided Engineering., Volume 13, Issue 4, Pages 293-305, 2003.
  9. C. Duperrier, M. Campovecchio, L. Rousset, M. Lajugie R. Quere,"New Design Method of Uniform and Non-Uniform Distributed Power Amplifiers".IEEE Transactions in Microwave Theory and Techniques (Special Issue), Volume 49, Issue 12, Pages 2494-2500, December 2001.


International Conferences (Paper invited)
  1. A.Divay, O.Latry, C.Duperrier, F.Temcamani, "Ageing of GaN HEMT devices: Which degradation indicators? ", EMN EAST Semiconductor Devices, Beijing, Chine, 20-23 Avril 2015.
  2. F.Temcamani, C.Duperrier, “RF power amplification”, série de 6 Conférences invitees (8h de tutorials) à la IEEE SSCS RFIC Summer School, 4 à 6 juin 2015, Iasi, Roumanie. Article relatif à cette manifestation publié dans IEEE SSCS magazine, Décembre 2015, p99.
  3. F.Temcamani, JB.Fonder, C.Duperrier, O.Latry, “Physical analysis of power AlGaN/GaN HEMT reliability”, IEICE Workshop on Circuits, Systems and Information Technology (WCSIT), Iasi, Roumanie, juillet 2014.


International Conferences
  1. Jérôme Loraine, Myriam Ariaudo, C.Duperrier, Stephan Doucet, "Design of High-Performances CMOS Power-Stage for Handset Applications based on MASMOS cells.", IEEE Radio and Wireless Week, January, Anaheim, United States, 2018.
  2. A.Divay, C.Duperrier, F.Temcamani, O.Latry, "Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode.", 27th European Symposium on reliability of electron devices, Failure Physics and Analysis, Saale Germany 2016.
  3. A.Divay, O.Latry, C.Duperrier, F.Temcamani, "Study of different algorithms and models for trapping effect extraction" 7th Microwave and radar week, May 9-12, Krakow, Poland, 2016.
  4. A.Divay, O.Latry, C.Duperrier, F.Temcamani, " Caractérisation de la diode d'un transistor HEMT en GaN sous illumination UV", TELECOM'2015 & 9ème Journées franco-maghrébines des microondes et de leurs applications, Maroc, Mars 2015.
  5. A.Divay, M.Masmoudi, O.Latry, C.Duperrier, F.Temcamani, "An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors." 26th European Symposium on reliability of electron devices, Failure Physics and Analysis, France 2015.
  6. F.Drillet, M.Hamieh, A.Brière, E.Unlu, M.Ariaudo, Y.Louët, J.Denoulet, A.Pinna, B.Granado, P.Garda, F.Pécheux, C.Duperrier, S.Quintanel, P.Meunier, C.Moy, O.Romain, "Flexible Radio Interface for NoC RF-Interconnect", Digital System Design (DSD), 2014 17th Euromicro Conference on, Verone, Italie, Aug. 2014.
  7. L.Zhou, M.Ariaudo, C.Duperrier, S.Quintanel, E.Bourdel, "Power Adaptive Receiver Based on Wide-Band Distributed Low Noise Amplifier for Home Wireless Networks",", 12th IEEE international NEWCAS conference, Trois-Rivières, Canada, June 20214.
  8. JB.Fonder, O.Latry, F.Temcamani, C.Duperrier, "Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization", 4th International Conference on Multimedia Computing and Systems, Marrakesh, Maroc, Avril 2014.
  9. E.Unlu, M.Hamieh, C.Moy, M.Ariaudo, Y.Louët, F.Drillet, A.Brière, L.Zerioul, J.Denoulet, A.Pinna, B.Granado, F.Pécheux, P.Garda, C.Duperrier, S.Quintanel, O.Romain, "An OFDMA Based RF Interconnect for Massive Multi-core Processors", 8th International Symposium on Networks-On-Chip, Ferrrara, Italie, September 2014.
  10. L. Zhou, C. Duperrier, S. Quintanel, S. Aloui, E. Bourdel "A 0.8-11GHz 0.15um pHEMT reconfigurable low power consumption distributed low noise amplifier for wireless home networks", 11th IEEE international NEWCAS conference, Paris, France, June 2013.
  11. S. Quintanel, D. Pasquet, E. Bourdel, C. Duperrier, D. Lesénéchal, T Vinh Dinh, P. Descamps, "On-Wafer multi-port circuits characterization technique with a two-port VNA", 81st ARFTG Microwave measurement conference, Seatle, June 2013.
  12. O. Latry, JB. Fonder, L. Chevalier, G. Genevois, C. Duperrier, F. Temcamani, H. Maanane, "Fiabilité d'amplificateurs de puissance à base de GaN: Analyse de la défaillance", TELECOM 2013 & 8ème Journées franco-maghrébines des microondes et de leurs applications, Maroc, Mars 2013.
  13. JB. Fonder, C. Duperrier, O. Latry, M. Stanislawiak, P. Eudeline, H. Maanane, F. Temcamani, "A reliability-based AlGaN/GaN HEMT model considering highe drain bias voltage ageing", Proceedings of Microwave Integrated Circuits European (EuMIC), Pays-bas, 2012.
  14. JB. Fonder, L. Chevalier, C. Genevois, O. Latry, C. Duperrier, F. Temcamani, H. Maanane, "Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test", 23rd European Symposium on reliability of electron devices, Failure Physics and Analysis, Italy 2012
  15. J. Chéron, M. Campovecchio, D. Barataud, M. Stanislawiak, P. Eudeline, D. Floriot, S. Heckmann, L. Favède, F. Temcamani , C. Duperrier, "Design of HEMT GaN power amplifiers with wideband control of 2nd Harmonic impedances in S-Band", Proceedings of Microwave Integrated Circuits European (EuMIC) , FRANCE, 2010.
  16. S. Allam-Ouyahia, C. Tolant, C. Duperrier, F. Temcamani, P. Eudeline, " Conception et comparaison d'un amplificateur classe B et F en bande L pour des applications de type radar", 5ème Journées franco-maghrébines des microondes et de leurs applications, Maroc, Mars 2007.
  17. S. Allam-Ouyahia, C. tolant, C. Duperrier, F. Temcamani, P. Eudeline, " Second input and output harmonics control in LDMOS power amplifiers for radar L-band", IEEE-ISM International Symposium on Microwave Digest, Bangalore, December 2006.
  18. S. Allam-Ouyahia, C. Duperrier, C. tolant, F. Temcamani, P. Eudeline, "A 719% power-added efficiency inverse class-F ldmos", IEEE Microwave Theory and Techniques Symposium Digest, San francisco, June 2006.
  19. S. Dellier, C. Duperrier, M. Campovecchio, J. Rousset, R. Quere, A. Mallet," Microwave design assistance software for spatial amplifier design", ESA Microwave Technology and Techniques workshop, Noordwijk The Netherlands, Pages 173-180, October 2002.
  20. C. Duperrier, M. Campovecchio, J. Rousset, R. Quere, S. Mons, A. Mallet, L. Lapierre, "Electronic design assistance tool for circuit optimization: Application to microwave power amplifiers", IEEE Microwave Theory and Techniques Symposium Digest, Volume 3, Pages 1067-1070, Phoenix, 2001.
  21. C. Duperrier, M. Campovecchio, L. Rousset, M. Lajugie, R. Quere, "New Design method of non-uniform distributed power amplifiers. Application to a single stage 1W pHEMT MMIC", IEEE Microwave Theory and Techniques Symposium Digest, Volume 2, Pages 1063-1066, Phoenix, 2001.
  22. L. Rousset, C. Duperrier, M. Campovecchio, "Two octave pHEMT power amplifiers for electronic warfare applications", 30th European microwave conference, Volume 1, Pages 212-216, Paris 2000.


National Conferences
  1. Jérôme Loraine, Stephan Doucet, Myriam Ariaudo, C. Duperrier, Renaud Lemoine, "Linéarisation et amélioration du rendement d’un amplificateur de puissance cascode par une inductance de dégénérescence",19ème JNM (Journées Nationales Microondes), Saint-Malo, Juin 2017.
  2. F.Drillet, C.Duperrier, S.Quintanel, E.Bourdel, "Dimensionnement d'un Transceiver RF de bande passante 20 GHz en technologie BiCMOS SiGe:C pour réseau sur puce",18ème JNM (Journées Nationales Microondes), Bordeaux, Juin 2015.
  3. A.Brière, J.Denoulet, A.Pinna, B.Granado, F.Pêcheux, P.Garda, M.Ariaudo, F.Drillet, C.Duperrier, M.Hamieh, S.Quintanel, O.Romain, L.Zerioul, Y.Louët, C.Moy, E.Unlu, E.Bourdel , "WiNoCoD : Un réseau d'interconnexion hiérarchique RF pour les MPSoC", Conférence d'informatique en Parallélisme, Architecture et Système, Neuchâtel, Suisse 2014.
  4. L. Zhou, C. Duperrier, S. Quintanel, E. Bourdel, "Etude et conception d'une architecture d'amplificateur faible bruit avec réveil reconfigurable", 18ème JNM (Journées Nationales Microondes), Paris, Mai 2013.
  5. Y. Jaballi, C. Duperrier, E. Bourdel, JL. Gautier, S. Quintanel, D. Pasquet, "Technique d'optimisation du TRMC d'un LNA différentiel aux fréquences millimétriques", 17ème JNM (Journées Nationales Microondes), Brest, Mai 2011.
  6. Y. Jaballi, S. Quintanel, E. Bourdel, D. Pasquet, C. Duperrier, JL. Gautier, "Technique de caractérisation sur puce de circuits N-ports en utilisant un VNA à deux accès", 17ème JNM (Journées Nationales Microondes), Brest, Mai 2011.
  7. JB. Fonder, C. Duperrier, F. Temcamani, O. Latry, P. Dherbecourt, L. Lacheze, M. Stanislawiak, P. Eudeline, "Etude de la fiabilité d'un amplificateur de puissance classe B à base de HEMT GaN en bande S", 17ème JNM (Journées Nationales Microondes), Brest, Mai 2011.
  8. JB. Fonder, C. Duperrier, F. Temcamani, O. Latry, P. Dherbecourt, L. Lacheze, M. Stanislawiak, P. Eudeline, "Conception et qualification d'un amplificateur de puissance radiofréquence à base de HEMT GaN", 13ème JNMO, Les Issambres, Côte d'Azur, Septembre 2010.
  9. S. Allam-Ouyahia, C. Duperrier, C. Tolant, F. Temcamani, P. Eudeline, "Amplificateur de puissance à très haut rendement à base de LDMOS Si pour les applications radars", 15ème JNM (Journées Nationales Microondes), Toulouse, Mai 2007.
  10. S. Allam-Ouyahia, C. Duperrier, C. Tolant, F. Temcamani, P. Eudeline, " Conception et comparaison d'un amplificateur classe B et F en bande L pour des applications de type radar", 14ème JNM (Journées Nationales Microondes), Nantes, Mai 2005.
  11. C. Duperrier, S. Quintanel, JL. Gautier, F. Temcamani, "Méthodologie de conception d'amplificateur faible bruit large bande. Comparaison des technologies GaN et SiGe", TAISA, Traitement analogique de l'information du signal et ses applications, Suisse, Octobre 2004.
  12. S. Quintanel, C. Duperrier,F. Temcamani, JL. Gautier, "Méthodologie de conception d'amplificateur faible bruit large bande. Comparaison des technologies GaN et SiGe", Workshop "Bruit en régime linéaire et non-linéaire dans les composants et circuits de télécommunications", action spécifique "bruit" du département STIC du CNRS, La Grande Motte, juin 2004.
  13. C. Duperrier, M. Campovecchio, J. Rousset, R. Quere, S. Mons, A. Mallet, L. Lapierre, "Assistant d'aide à la conception de circuits microondes et millimétriques. Applications aux amplificateurs de puissance", 12ème JNM (Journées Nationales Microondes), Poitiers, Mai 2001.


Dissertation committee
    Stéphane DELLIER 18 july 2005
    "Contributions à la conception des circuits microondes. Outil informatique d'assistance à la conception de drivers pour la gnération d'impulsions optiques"
    University of Limoges
    Samia ALLAM-OUYAHIA 11 december 2006
    "Amplificateurs de puissance à très haut rendement pour les systèmes radar basés sur les technologies LDMOS Si et HEMT GaN"
    University of Cergy-Pontoise
    Ghalid Idir ABIB 11 december 2007
    "Plate-forme de caractérisation fonctionnelle de transistors de puissance micro-ondes incluant la prédistorsion numérique en bande de base"
    University of Pierre and Marie Curie
    Cristian ANDRIESI 02 december 2010
    "Etude de topologies de filtrage à base d'inductances active pour des applications en télécommunications"
    University of Cergy-Pontoise
    Jean-Baptiste FONDER 22 october 2012
    "Analyse des mécanismes de défaillance dans les transistors de puissance radiofréquences HEMT AlGaN/GaN"
    University of Cergy-Pontoise
    Liang ZHOU 15 march 2015
    "Architecture d’amplificateur faible bruit large bande multistandard avec gestion optimale de la consommation"
    University of Cergy-Pontoise
    Alexis DIVAY 15 october 2015
    "Fiabilité à long terme des transistors HEMT à base de GaN"
    University of Rouen
    Frédéric DRILLET 14 october 2016
    "Réseau sur puce basé sur des interconnexions RF reconfigurable à la demande"
    University of Cergy-Pontoise
    Mohammed Adnam ADDOU 15 december 2016
    "Filtrage actif intégré reconfigurable pour la téléphonie sans fil."
    University of Limoges


    Copyright Notice:
    The material presented is available for download to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
    In case the work has been submitted for possible publication, copyright may be transferred without notice after which it may no longer be accessible.
    The work already published by the IEEE is under its copyright. Personal use of such material is permitted. However, permission to reprint/republish the material for advertising or promotional purposes, or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of the work in other works must be obtained from the IEEE.